May 20, 2024
IGBT and Super Junction MOSFET Market
Ict

The Global IGBT And Super Junction MOSFET Market Is Estimated To Propel By Rising Adoption Of Renewable Energy

Insulated Gate Bipolar Transistors (IGBTs) and Super Junction MOSFETs are widely used in renewable energy due to their high efficiency, minimizing power losses. IGBTs and MOSFETs help drive solar panels, wind turbines, and electric vehicles by regulating power flow. Their ruggedness and longevity in harsh operating environments make them essential for renewable infrastructure. IGBTs switch quickly and conduct large currents while MOSFETs excel at low voltages.

Renewable technologies require power electronic switches to convert, modulate and control electric power produced from solar, wind or hydro sources. IGBTs control high power flows in solar inverters that convert direct current to alternating current grid power. They govern electric currents in voltage regulators, servo drives and battery chargers for electric vehicles. Super Junction MOSFETs are favored in motor drives for solar trackers and wind turbine pitch control thanks to their precision switching. Both devices enable maximum power point tracking algorithms in photovoltaic systems for optimized solar harnessing.

The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 5.1% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.

Market key Trends:

Renewable energy adoption is accelerating globally driven by climate change concerns and energy independence goals. Solar and wind capacity additions continue breaking records annually with over 280 GW of new clean power installed worldwide in 2021 according to the International Renewable Energy Agency. This vast renewable expansion is propelling IGBT and MOSFET demand higher as both technologies play a crucial role regulating electric power flows efficiently and reliably from intermittent natural sources. Their ruggedness and longevity also make them preferred over alternatives for operational lifetimes often exceeding 25 years in harsh outdoor applications suffering temperature fluctuations, rain, dust and other stresses.

Porter’s Analysis

Threat of new entrants: The IGBT and Super Junction MOSFET market has moderate threat of new entrants due to high capital requirements and the need for technical expertise to manufacture large volumes.

Bargaining power of buyers: The bargaining power of buyers is moderate since there are many established players in the market providing comparable products.

Bargaining power of suppliers: The bargaining power of suppliers is moderate as raw materials required for manufacturing are commoditized and available from multiple sources globally.

Threat of new substitutes: There is low threat from substitutes as IGBTs and MOSFETs have widespread applications in electric vehicles, industrial motors, and renewable energy generation where substitutes are limited.

Competitive rivalry: Competition in the market is high among key global players constantly investing in R&D to develop innovative and efficient products.

Key Takeaways

The global IGBT And Super Junction MOSFET Market Share is expected to witness high growth. Rapid adoption of electric vehicles worldwide along with focus on renewable energy generation will drive demand during the forecast period. The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 5.1% over the forecast period 2023 to 2030.

The Asia Pacific region currently dominates the market and is expected to maintain its lead position owing to presence of major automotive OEMs and rapid industrialization in China and India. The European region is expected to showcase significant growth in the IGBT and Super Junction MOSFET market led by government support for adoption of electric vehicles. European Commission’s recent mandate to end sales of new petrol and diesel vehicles by 2035 will boost replacement demand for power devices in electric powertrains.

Key players operating in the IGBT and Super Junction MOSFET market are Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., ABB Ltd., Toshiba Corporation, Rogan Corporation, STMicroelectronics N.V., and Semikron.

*Note:
1. Source: Coherent Market Insights, Public sources, Desk research
2. We have leveraged AI tools to mine information and compile it